Customise Consent Preferences

We use cookies to help you navigate efficiently and perform certain functions. You will find detailed information about all cookies under each consent category below.

The cookies that are categorised as "Necessary" are stored on your browser as they are essential for enabling the basic functionalities of the site. ... 

Always Active

Necessary cookies are required to enable the basic features of this site, such as providing secure log-in or adjusting your consent preferences. These cookies do not store any personally identifiable data.

No cookies to display.

Functional cookies help perform certain functionalities like sharing the content of the website on social media platforms, collecting feedback, and other third-party features.

No cookies to display.

Analytical cookies are used to understand how visitors interact with the website. These cookies help provide information on metrics such as the number of visitors, bounce rate, traffic source, etc.

No cookies to display.

Performance cookies are used to understand and analyse the key performance indexes of the website which helps in delivering a better user experience for the visitors.

No cookies to display.

Advertisement cookies are used to provide visitors with customised advertisements based on the pages you visited previously and to analyse the effectiveness of the ad campaigns.

No cookies to display.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MID200-12A4 IXYS/Littelfuse | IGBT Transistors / Modules

Leaderone #MID200-12A4 IXYS/Littelfuse | IGBT Transistors / Modules
Mfr.Part.#MID200-12A4
Mfr.IXYS/Littelfuse
Encapsulation
Description1130W 270A 1.2kV NPT (non-penetrating type) IGBT Transistors / Modules ROHS
Product CategoryHot Brands
In stock2500
RoHSYES
Mounting Style
Package / CaseBox-packed
SubcategoryIGBT Transistors / Modules
More InformationPd - Power Dissipation:1130W|Operating Temperature:-|Current - Collector(Ic):270A|Collector-Emitter Breakdown Voltage (Vces):1.2kV|Input Capacitance(Cies):11nF@25V|IGBT Type:NPT (non-penetrating type)|Gate-Emitter Threshold Voltage (Vge(th)@Ic):-
Get A Quote