Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GT50JR22(STA1,E,S) Toshiba | IGBT Transistors / Modules

Leaderone #GT50JR22(STA1,E,S) Toshiba | IGBT Transistors / Modules
Mfr.Part.#GT50JR22(STA1,E,S)
Mfr.Toshiba
EncapsulationSC-65-3
Description230W 50A 600V SC-65-3 IGBT Transistors / Modules ROHS
Product CategoryHot Brands
In stock3000
RoHSYES
Mounting Style
Package / CaseTube-packed
SubcategoryIGBT Transistors / Modules
More InformationTd(off):-|Pd - Power Dissipation:230W|Operating Temperature:-|Td(on):-|Current - Collector(Ic):50A|Collector-Emitter Breakdown Voltage (Vces):600V|IGBT Type:-|Gate-Emitter Threshold Voltage (Vge(th)@Ic):2.2V@15V,50A|Switching Energy(Eoff):-|Turn-On Energy…
Get A Quote