GT30J121(Q) Toshiba | IGBT Transistors / Modules
| Leaderone # | GT30J121(Q) Toshiba | IGBT Transistors / Modules |
| Mfr.Part.# | GT30J121(Q) |
| Mfr. | Toshiba |
| Encapsulation | TO-3P(N) |
| Description | 170W 30A 600V TO-3P(N) IGBT Transistors / Modules ROHS |
| Product Category | Hot Brands |
| In stock | 3000 |
| RoHS | YES |
| Mounting Style | |
| Package / Case | Tube-packed |
| Subcategory | IGBT Transistors / Modules |
| More Information | Td(off):300ns|Pd - Power Dissipation:170W|Td(on):90ns|Current - Collector(Ic):30A|Collector-Emitter Breakdown Voltage (Vces):600V|IGBT Type:-|Gate-Emitter Threshold Voltage (Vge(th)@Ic):2.45V@15V,30A|Switching Energy(Eoff):0.8mJ|Turn-On Energy (Eon):1mJ |
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