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FP50R07N2E4B11 Infineon Technologies | IGBT Transistors / Modules

Leaderone #	FP50R07N2E4B11 Infineon Technologies \| IGBT Transistors / Modules
Mfr.Part.#	FP50R07N2E4B11
Mfr.	Infineon Technologies
Encapsulation
Description	20mW 70A 650V FS(Field Stop) IGBT Transistors / Modules ROHS
Product Category	Hot Brands
In stock	98
RoHS	YES
Mounting Style
Package / Case	Tray
Subcategory	IGBT Transistors / Modules
More Information	Pd - Power Dissipation:20mW\|Operating Temperature:-40¡æ~+150¡æ@(Tj)\|Current - Collector(Ic):70A\|Collector-Emitter Breakdown Voltage (Vces):650V\|Input Capacitance(Cies):3.1nF@25V\|IGBT Type:FS(Field Stop)\|Gate-Emitter Threshold Voltage (Vge(th)@Ic):1.95V@15…

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