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FF900R12ME7PB11 Infineon Technologies | IGBT Transistors / Modules

Leaderone #FF900R12ME7PB11 Infineon Technologies | IGBT Transistors / Modules
Mfr.Part.#FF900R12ME7PB11
Mfr.Infineon Technologies
Encapsulation
Description900A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS
Product CategoryHot Brands
In stock98
RoHSYES
Mounting Style
Package / CaseTray
SubcategoryIGBT Transistors / Modules
More InformationOperating Temperature:-40¡æ~+175¡æ|Current - Collector(Ic):900A|Collector-Emitter Breakdown Voltage (Vces):1.2kV|Input Capacitance(Cies):122nF@25V|IGBT Type:FS(Field Stop)|Gate-Emitter Threshold Voltage (Vge(th)@Ic):1.8V@15V,900A
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