Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FF600R12KE4PBOSA1 Infineon Technologies | IGBT Transistors / Modules

Leaderone #FF600R12KE4PBOSA1 Infineon Technologies | IGBT Transistors / Modules
Mfr.Part.#FF600R12KE4PBOSA1
Mfr.Infineon Technologies
Encapsulation
Description600A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS
Product CategoryHot Brands
In stock98
RoHSYES
Mounting Style
Package / CaseTray
SubcategoryIGBT Transistors / Modules
More InformationOperating Temperature:-40¡æ~+150¡æ@(Tj)|Current - Collector(Ic):600A|Collector-Emitter Breakdown Voltage (Vces):1.2kV|Input Capacitance(Cies):38nF@25V|IGBT Type:FS(Field Stop)|Gate-Emitter Threshold Voltage (Vge(th)@Ic):2.2V@15V,600A
Get A Quote