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FF400R12KT3E Infineon Technologies | IGBT Transistors / Modules

Leaderone #FF400R12KT3E Infineon Technologies | IGBT Transistors / Modules
Mfr.Part.#FF400R12KT3E
Mfr.Infineon Technologies
Encapsulation
Description2kW 580A 1.2kV IGBT Transistors / Modules ROHS
Product CategoryHot Brands
In stock98
RoHSYES
Mounting Style
Package / CaseBag-packed
SubcategoryIGBT Transistors / Modules
More InformationPd - Power Dissipation:2kW|Operating Temperature:-40¡æ~+125¡æ|Current - Collector(Ic):580A|Collector-Emitter Breakdown Voltage (Vces):1.2kV|Input Capacitance(Cies):28nF@25V|IGBT Type:-|Gate-Emitter Threshold Voltage (Vge(th)@Ic):2.15V@15V,400A
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