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FD600R17KE3B2 Infineon Technologies | IGBT Transistors / Modules

Leaderone #	FD600R17KE3B2 Infineon Technologies \| IGBT Transistors / Modules
Mfr.Part.#	FD600R17KE3B2
Mfr.	Infineon Technologies
Encapsulation
Description	4.3kW 1.7kV IGBT Transistors / Modules ROHS
Product Category	Hot Brands
In stock	98
RoHS	YES
Mounting Style
Package / Case	Bag-packed
Subcategory	IGBT Transistors / Modules
More Information	Pd - Power Dissipation:4.3kW\|Operating Temperature:-40¡æ~+125¡æ\|Collector-Emitter Breakdown Voltage (Vces):1.7kV\|Input Capacitance(Cies):54nF@25V\|IGBT Type:-\|Gate-Emitter Threshold Voltage (Vge(th)@Ic):2.45V@15V,600A

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