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F4150R17ME4B11 Infineon Technologies | IGBT Transistors / Modules

Leaderone #	F4150R17ME4B11 Infineon Technologies \| IGBT Transistors / Modules
Mfr.Part.#	F4150R17ME4B11
Mfr.	Infineon Technologies
Encapsulation
Description	230A 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS
Product Category	Hot Brands
In stock	98
RoHS	YES
Mounting Style
Package / Case	Tray
Subcategory	IGBT Transistors / Modules
More Information	Operating Temperature:-40¡æ~+150¡æ@(Tj)\|Current - Collector(Ic):230A\|Collector-Emitter Breakdown Voltage (Vces):1.7kV\|Input Capacitance(Cies):12nF@25V\|IGBT Type:FS(Field Stop)\|Gate-Emitter Threshold Voltage (Vge(th)@Ic):2.3V@15V,150A

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