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BSM35GD120DN2BOSA1 Infineon Technologies | IGBT Transistors / Modules

Leaderone #	BSM35GD120DN2BOSA1 Infineon Technologies \| IGBT Transistors / Modules
Mfr.Part.#	BSM35GD120DN2BOSA1
Mfr.	Infineon Technologies
Encapsulation
Description	280W 50A 1.2kV IGBT Transistors / Modules ROHS
Product Category	Hot Brands
In stock	98
RoHS	YES
Mounting Style
Package / Case	Bag-packed
Subcategory	IGBT Transistors / Modules
More Information	Pd - Power Dissipation:280W\|Operating Temperature:-\|Current - Collector(Ic):50A\|Collector-Emitter Breakdown Voltage (Vces):1.2kV\|Input Capacitance(Cies):2nF@25V\|IGBT Type:-\|Gate-Emitter Threshold Voltage (Vge(th)@Ic):-

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