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FS75R12KE3B9 Infineon Technologies | IGBT Transistors / Modules

Leaderone #	FS75R12KE3B9 Infineon Technologies \| IGBT Transistors / Modules
Mfr.Part.#	FS75R12KE3B9
Mfr.	Infineon Technologies
Encapsulation
Description	350W 105A 1.2kV IGBT Transistors / Modules ROHS
Product Category	Hot Brands
In stock	98
RoHS	YES
Mounting Style
Package / Case	Tray
Subcategory	IGBT Transistors / Modules
More Information	Pd - Power Dissipation:350W\|Operating Temperature:-40¡æ~+150¡æ@(Tj)\|Current - Collector(Ic):105A\|Collector-Emitter Breakdown Voltage (Vces):1.2kV\|Input Capacitance(Cies):5.3nF@25V\|IGBT Type:-\|Gate-Emitter Threshold Voltage (Vge(th)@Ic):2.15V@15V,75A

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