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BSM50GAL120DN2 Infineon Technologies | IGBT Transistors / Modules

Leaderone #BSM50GAL120DN2 Infineon Technologies | IGBT Transistors / Modules
Mfr.Part.#BSM50GAL120DN2
Mfr.Infineon Technologies
Encapsulation
Description400W 78A 1.2kV IGBT Transistors / Modules ROHS
Product CategoryHot Brands
In stock98
RoHSYES
Mounting Style
Package / CaseTray
SubcategoryIGBT Transistors / Modules
More InformationPd - Power Dissipation:400W|Current - Collector(Ic):78A|Collector-Emitter Breakdown Voltage (Vces):1.2kV|Input Capacitance(Cies):3.3nF@25V|Gate-Emitter Threshold Voltage (Vge(th)@Ic):3V@15V,50A
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