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FZ600R12KE4HOSA1 Infineon Technologies | IGBT Transistors / Modules

Leaderone #	FZ600R12KE4HOSA1 Infineon Technologies \| IGBT Transistors / Modules
Mfr.Part.#	FZ600R12KE4HOSA1
Mfr.	Infineon Technologies
Encapsulation
Description	3kW 600A 1.2kV IGBT Transistors / Modules ROHS
Product Category	Hot Brands
In stock	98
RoHS	YES
Mounting Style
Package / Case	Tray
Subcategory	IGBT Transistors / Modules
More Information	Pd - Power Dissipation:3kW\|Operating Temperature:-40¡æ~+125¡æ\|Current - Collector(Ic):600A\|Collector-Emitter Breakdown Voltage (Vces):1.2kV\|Input Capacitance(Cies):1.7nF@25V\|IGBT Type:-\|Gate-Emitter Threshold Voltage (Vge(th)@Ic):2.1V@15V,600A

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