GT20N135SRA,S1E Toshiba | IGBT Transistors / Modules
| Leaderone # | GT20N135SRA,S1E Toshiba | IGBT Transistors / Modules |
| Mfr.Part.# | GT20N135SRA,S1E |
| Mfr. | Toshiba |
| Encapsulation | TO-247 |
| Description | 312W 40A 1.35kV TO-247 IGBT Transistors / Modules ROHS |
| Product Category | Hot Brands |
| In stock | 3000 |
| RoHS | YES |
| Mounting Style | |
| Package / Case | Tube-packed |
| Subcategory | IGBT Transistors / Modules |
| More Information | Td(off):-|Pd - Power Dissipation:312W|Operating Temperature:-|Td(on):-|Current - Collector(Ic):40A|Collector-Emitter Breakdown Voltage (Vces):1.35kV|IGBT Type:-|Gate-Emitter Threshold Voltage (Vge(th)@Ic):-|Gate Charge(Qg):185nC|Turn-On Energy (Eon):- |
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