GT60M324(Q) Toshiba | IGBT Transistors / Modules
| Leaderone # | GT60M324(Q) Toshiba | IGBT Transistors / Modules |
| Mfr.Part.# | GT60M324(Q) |
| Mfr. | Toshiba |
| Encapsulation | TO-3P-3 |
| Description | 254W 60A 900V TO-3P-3 IGBT Transistors / Modules ROHS |
| Product Category | Hot Brands |
| In stock | 3000 |
| RoHS | YES |
| Mounting Style | |
| Package / Case | Tube-packed |
| Subcategory | IGBT Transistors / Modules |
| More Information | Pd - Power Dissipation:254W|Td(off):-|Operating Temperature:-|Td(on):-|Current - Collector(Ic):60A|Collector-Emitter Breakdown Voltage (Vces):900V|IGBT Type:-|Gate-Emitter Threshold Voltage (Vge(th)@Ic):7.5V@60mA|Gate Charge(Qg):-|Vce Saturation(VCE(sat))… |
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